CNN–BiLSTM Attention Hybrid Modeling Czochralski Silicon Diameter Prediction #WorldResearchAwards
Introduction High-precision prediction of crystal diameter during the growth of electronic-grade silicon single crystals is a crucial requirement for achieving superior crystal quality and yield in semiconductor manufacturing . The Czochralski (Cz) crystal growth process operates under extreme thermal conditions and exhibits strong nonlinear behavior, time-delay effects , and sensitivity to external disturbances. These challenges significantly restrict the prediction accuracy of traditional mechanism-based models, which rely on simplified heat-transfer principles and geometric assumptions. As industrial demand for larger and defect-free silicon wafers continues to rise, advanced predictive strategies capable of handling complex process dynamics have become increasingly essential. Limitations of Mechanism-Based Diameter Models Mechanism-based models in crystal growth typically describe the relationship between heater power, pulling rate, and crystal diameter through physics-informe...