Defect Characterization of the SiO₂/Si Interface Using Positron Spectroscopy #worldresearchawards
Introduction This research explores drift-assisted positron annihilation lifetime spectroscopy (PALS) applied to a p-type (100) silicon substrate within a metal–oxide–silicon (MOS) capacitor . By employing an externally applied electric field, the study demonstrates precise control over the spatial distribution of positrons prior to annihilation. This approach enables deeper insight into interface-sensitive defect characterization, particularly at the technologically critical SiO₂/Si interface , which plays a central role in modern semiconductor device reliability and performance. Electric-Field-Controlled Positron Drift in MOS Structures The operation of the MOS capacitor under accumulation, depletion, and inversion regimes reveals that internal electric fields significantly influence positron drift transport . Depending on the bias condition, the electric field can either drive positrons toward the SiO₂/Si interface or repel them into the silicon bulk. This behavior effectively al...