Study on the law of atom migration rate of stress-dislocation subsurface damage in silicon wafer

 Study on the law of atom migration rate of stress-dislocation subsurface damage in silicon wafer

In ultra-precision machining, the variation of atom migration rate leads to stress concentration on the silicon wafer surface, causing subsurface damage. 
By coupling the Weierstrass-Mandelbrot fractal surface function method with molecular dynamics, a model of the rough surface of silicon wafers is constructed, and the subsurface damage of silicon wafers during the grinding process is analyzed. 
Diamond structure identification technology is applied to analyze the changes of Other type atoms in the surface layer and the surface morphology, and the "W"-shaped variation trend of roughness caused by atom migration rate is summarized. 
Combining crystal structure, dislocation changes and coordination number, the formation mechanism of subsurface atomic structure damage layer is compared and analyzed. 
The study shows that at atom migration rates of 90 m/s and 170 m/s, surface roughness remains relatively low, with Sa values of 5.38 nm and 5.57 nm, respectively, indicating that appropriate atom migration rates enable high-precision surface flattening. 
As atom migration rates vary, increased stress concentration leads to semicircular dislocation distribution, which gradually retracts, forming a subsurface damage layer. 
This research reveals the impact of atom migration rates on subsurface damage in silicon wafers, providing a critical theoretical basis for optimizing grinding processes.

Global Particle Physics Excellence Awards


#Sciencefather 
#SiliconWafer
#SemiconductorResearch 
#DislocationMechanics 
#SubsurfaceDamage 
#AtomMigration 
#MaterialScience 
#WaferProcessing 
#Microelectronics 
#CrystalDefects 
#StressAnalysis 
#Nanotechnology 
#WaferFabrication

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