Advanced Magnetic Coupler & Gate Metal Defect Screening Innovations | UAV Charging #Sciencefather #Researcherawards


Introduction

The reliability of Gallium Nitride (GaN) High-Electron-Mobility Transistors (HEMTs) is becoming increasingly crucial as demand rises for high-power and high-frequency applications. Although GaN devices provide superior switching performance, power efficiency, and thermal stability compared to conventional silicon-based devices, their reliability remains a key challenge—particularly when gate-related defects compromise long-term stability. Traditional High-Temperature Gate Bias (HTGB) testing helps identify failure-inducing defects but is costly and time-consuming, especially when screening is only performed after full device packaging. This creates financial risks, including wasted manufacturing resources, and reputational risk if defective devices reach the market. Therefore, the need for efficient wafer-level screening methods is urgent, enabling earlier defect detection and improved yield before entering expensive packaging steps.

GaN HEMT Reliability Challenges

GaN HEMTs are known for their wide bandgap advantages, yet the sensitivity of the gate region introduces reliability concerns. Small-scale structural defects in the gate metal can significantly impact device stability under electrical and thermal stress. These small anomalies are difficult to detect during standard inspections due to their identical composition to bulk materials. The stresses applied during HTGB accelerate defect manifestations, but identifying these defects earlier in the process is necessary to reduce failure rates and improve overall manufacturing robustness.

Inefficiency of Forward Gate Current (IGON) as a Screening Metric

The failure analysis revealed that IGON measurements are not effective indicators of gate defects. This is because GaN HEMTs inherently exhibit high gate leakage through the passivation layer, masking subtle contributions from structural defects. As a result, relying on IGON for defect detection leads to a significant risk of undetected faulty devices passing through quality control. This insight highlights the need for more sensitive and selective electrical parameters to serve as early-stage screening tools in wafer-level testing.

The Role of Reverse Gate Current (IGOFF) and Package-Induced Stress

Reverse Gate Current (IGOFF) proved to be more sensitive to gate defects, particularly under tensile stress imposed during the molding process. The piezoelectric nature of GaN modifies the depletion region width under mechanical stress, affecting IGOFF levels in a measurable way. This mechanical-electrical coupling enables IGOFF to act as an effective indicator of potential gate anomalies. The correlation between stress-induced electrical changes and defect presence provides a crucial insight into refining reliability assessment methods.

Development of a Multi-Pulse IDSS Screening Method

A multi-pulse IDSS test was established to amplify the subtle electrical field perturbations caused by gate defects. This method enhances sensitivity by revealing small deviations that are otherwise masked in conventional screening techniques. By applying controlled pulses and monitoring drain-to-source saturation current changes, the new methodology allows for effective differentiation between healthy and defective dies. The approach significantly improves early defect detection at the wafer level, preventing defective components from proceeding to the packaging stage.

Reliability Improvement and Yield Optimization

The implementation of the enhanced wafer-level screening methodology produced measurable results. Out of 231 dies screened using the multi-pulse IDSS method, zero failures occurred during subsequent 1000-hour HTGB stress testing, compared to a 0.43% failure rate observed prior to introducing the new screening technique. This outcome validates the effectiveness of the proposed approach and demonstrates its potential to reduce manufacturing risk, enhance device lifetime, and optimize overall yield. Early defect identification enables more cost-efficient production and strengthens confidence in GaN HEMTs for critical high-power applications.

 Global Particle Physics Excellence Awards


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